Semiconductor device including contact plug and method of manufacturing the same

ABSTRACT

A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

CROSS-REFERENCE TO RELATED APPLICATIONS

A claim of priority is made to Korean Patent Application No.10-2010-001424, filed on Feb. 17, 2010, in the Korean IntellectualProperty Office, the subject matter of which is hereby incorporated byreference.

BACKGROUND

Embodiments of the inventive concept relate to a semiconductor deviceand a method of manufacturing the same, and more particularly, to asemiconductor device including a contact plug and a method ofmanufacturing the semiconductor device.

As the degree of integration of semiconductor devices increases, designrule parameters for elements included in the semiconductor devicesdecrease. For example, in semiconductor devices requiring a large numberof transistors, a gate length, which is one of the design ruleparameters, decreases, the size of a contact hole for electricallyconnecting conductive layers of different levels decreases, and anaspect ratio increases.

SUMMARY

An embodiment of the inventive concept provides a semiconductor deviceincluding a contact plug that is small enough to scale down thesemiconductor device and has no seam or void that would increase contactresistance.

An embodiment of the inventive concept also provides a method ofmanufacturing a semiconductor device including a contact plug that issmall enough to scale down the semiconductor device, and that haselectrical characteristics sufficient to fill a contact hole with aconductive material without a seam or void that would increase contactresistance.

According to an aspect of the inventive concept, there is provided asemiconductor device including a substrate having a conductive area, afirst pattern formed on the substrate and having a contact hole throughwhich the conductive area is exposed, and a contact plug in the contacthole. The contact plug includes first and second silicon layers. Thefirst silicon layer is formed from a first compound including at leasttwo silicon atoms, and is formed in the contact hole to contact a topsurface of the conductive area and a side wall of the first pattern. Thesecond silicon layer is formed from a second compound including a numberof silicon atoms less than the number of the silicon atoms of the firstcompound, and is formed on the first silicon layer, filling a remainingspace of the contact hole, the second silicon layer being spaced apartfrom the first pattern at an entrance of the contact hole.

The first compound may be represented by Si_(n)H_(2n+2), where n is anatural number satisfying 2=n=10). The second compound may be SiH₄, forexample.

Each of the first silicon layer and the second silicon layer may furtherinclude a first conductive-type impurity. The first conductive-typeimpurity may be an N-type impurity or a P-type impurity. The firstpattern may be formed of conductive polysilicon.

According to another aspect of the inventive concept, there is provideda method of manufacturing a semiconductor device. The method includesforming a first pattern on a semiconductor substrate, the first patternhaving a contact hole through which a top surface of a conductive areaof the semiconductor substrate is exposed; forming a first silicon layeron the exposed top surface of the conductive area and on a side wall ofthe first pattern to partially fill the contact hole, the first siliconlayer being formed using a first compound having at least two siliconatoms; and forming a second silicon layer on the first silicon layer tofill a remaining space of the contact hole, the second silicon layerbeing formed using a second compound having fewer silicon atoms than thefirst compound.

The first compound may be represented by Si_(n)H_(2n+2), where n is anatural number satisfying 2=n=10. The first compound may be Si₂H₆, andthe second compound may be SiH₄, for example.

Each of the first silicon layer and the second silicon layer may beformed by chemical vapor deposition (CVD). The forming of the secondsilicon layer may include forming the second silicon layer in situ in areaction chamber used to form the first silicon layer.

The forming of the first silicon layer may include simultaneouslysupplying the first compound and a first dopant source to thesemiconductor substrate. The forming of the second silicon layer mayinclude simultaneously supplying the second compound and a second dopantsource to the semiconductor substrate.

The forming of the first silicon layer may include forming the firstsilicon layer at a first temperature and the forming of the secondsilicon layer may include forming the second silicon layer at a secondtemperature that is higher than the first temperature. The firsttemperature may be in a range of about 350° C. to about 550° C., forexample.

The first pattern may include a conductive polysilicon layer. The firstsilicon layer may be formed in the contact hole to directly contact theconductive area and the first pattern. The method may further includepartially removing the first silicon layer and the second silicon layer,and forming a contact plug including remaining portions of the firstsilicon layer and the second silicon layer remaining in the contacthole. A conductive layer is formed to cover the contact plug and thefirst pattern.

The first pattern may include an insulating layer. The method mayfurther include forming an insulating spacer in the contact hole along aside wall of the first pattern, where the first silicon layer is formedin the contact hole to directly contact the conductive area and theinsulating spacer.

According to another aspect of the inventive concept, there is provideda method of manufacturing a semiconductor device. The method includesforming a conductive polysilicon layer on a semiconductor substrate, theconductive polysilicon layer having a contact hole through which aconductive area on the semiconductor substrate is exposed; forming afirst contact conductive layer on the conductive polysilicon layer andthe conductive area exposed through the contact hole using a chemicalvapor deposition (CVD) process using a first dopant source and a firstsilicon source formed of a compound comprising at least two siliconatoms; and forming a second contact conductive layer on the firstcontact conductive layer, filling a remaining space of the contact holearound an entrance of the contact hole, using a CVD process using asecond dopant source and a second silicon source formed of a compoundhaving fewer silicon atoms than the compound of the first siliconsource. The first contact conductive layer and the second contactconductive layer are partially removed to form a contact plug, whichincludes remaining portions of the first contact conductive layer andthe second contact conductive layer remaining in the contact hole.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the inventive concept will be described withreference to the attached drawings, in which:

FIG. 1 is an image illustrating a silicon layer formed in a hole,through which a conductive polysilicon layer pattern and an oxide layerpattern are exposed, using a chemical vapor deposition (CVD) process, byusing a silicon source formed of a compound including one silicon atom;

FIG. 2 is an image illustrating a silicon layer formed in a hole,through which a conductive polysilicon layer pattern and an oxide layerpattern are exposed, using a CVD process, by using a silicon sourceformed of a compound including two silicon atoms;

FIGS. 3A through 3F are cross-sectional views illustrating a method ofmanufacturing a semiconductor device, according to an embodiment of theinventive concept;

FIG. 4A is a layout of semiconductor device, according to an embodimentof the inventive concept;

FIG. 4B is a cross-sectional view taken along line 4B-4B′ of FIG. 4A;

FIG. 4C is a cross-sectional view taken along line 4C-4C′ of FIG. 4A;

FIGS. 5A through 5G are cross-sectional views illustrating a method ofmanufacturing a semiconductor device, according to another embodiment ofthe inventive concept;

FIG. 6 is a plan view illustrating a lower conductive layer in which acontact hole is formed by operation 5B;

FIG. 7 is a plan view illustrating the lower conductive layer and adirect contact formed in the contact hole by operation of FIG. 5F;

FIGS. 8A through 8G are cross-sectional views illustrating a method ofmanufacturing a semiconductor device, according to another embodiment ofthe inventive concept;

FIG. 9 is a plan view of a memory module including a semiconductordevice, according to an embodiment of the inventive concept;

FIG. 10 is a block diagram of a memory card including a semiconductordevice, according to an embodiment of the inventive concept; and

FIG. 11 is a block diagram of a system including a semiconductor device,according to an embodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The invention concept will now be described more fully with reference tothe accompanying drawings, in which exemplary embodiments of theinventive concept are shown. The inventive concept, however, may beembodied in various different forms, and should not be construed asbeing limited only to the illustrated embodiments. Rather, theseembodiments are provided as examples so that this disclosure will bethorough and complete, and will fully convey the concept of theinventive concept to those skilled in the art. Accordingly, knownprocesses, elements, and techniques are not described with respect tosome of the embodiments of the inventive concept. Various elements andregions are schematically illustrated in the drawings, although theinventive concept is not limited to sizes or intervals shown in thedrawings. Unless otherwise noted, like reference numerals denote likeelements throughout the attached drawings and written description.

In order to increase the degree of integration of semiconductor devices,design rule parameters, such as gate line widths of transistors anddistances between the transistors, should be reduced. Accordingly, linewidths of wiring patterns for electrically connecting the transistorsand distances between the wiring patterns are also reduced.

For example, a contact plug may be formed to electrically connectsource/drain regions of the transistors to bit lines formed over thesource/drain regions. Due to the increased degree of integration of thesemiconductor device, a contact hole in which the contact plug is to beformed is very small and has a high aspect ratio. There is a demand fora technology for filling the small contact hole with a conductivematerial without creating a seam or void.

Thus, according to various embodiments, a contact hole is filled with asilicon-containing material using a chemical vapor deposition (CVD)process, where a silicon layer is exposed through the contact hole. Thecontact hole is filled with the silicon-containing material in ways thatvary according to the type of silicon source used to form thesilicon-containing material.

FIG. 1 is an image illustrating a case in which a silicon layer 50 isformed to a target thickness of about 150 Å in a hole H1, through whicha conductive polysilicon layer pattern 20 and an oxide layer pattern 30are exposed, using a CVD process, in which a SiH₄ gas is used as asilicon source gas. The SiH₄ gas is a compound including one siliconatom.

When the SiH₄ gas is used, the silicon source tends to heavily depositaround an interface between the conductive polysilicon layer pattern 20and the oxide layer pattern 30. This is because silicon atoms of theSiH₄ gas generally migrate to an area around. the interface between theconductive polysilicon layer pattern 20 and the oxide layer pattern 30,and thus a larger number of silicon atoms deposit around the interfacethan other areas. The tendency becomes stronger as the number of siliconatoms included in the compound, e.g., SiH₄, constituting the siliconsource decreases. Due to the heavy deposition around the interface, apoor silicon seed is formed at an initial stage of the process offorming the silicon layer 50. As a result, the silicon layer 50 has poorsurface roughness. In particular, when silicon atoms excessively depositaround the interface between the conductive polysilicon layer pattern 20and the oxide layer pattern 30 as compared to other areas, as shown inFIG. 1, subsequent deposition may form an overhang at the entrance ofthe hole H1. Thus, the entrance of the hole H1 may close before the holeH1 is completely filled, resulting in a seam or void in the hole H1. Acontact plug with such a seam or void may increase contact resistance.

In contrast, when a silicon layer is formed in a hole using a CVDprocess, in which the silicon source gas is a compound including two ormore silicon atoms instead of one silicon atom, such as SiH₄, forexample, no overhang is formed around an interface between a conductivepolysilicon layer pattern and an oxide layer pattern in the hole. Asilicon layer having excellent surface roughness is thus obtained.

FIG. 2 is an image illustrating a case in which a silicon layer 60 isformed to a target thickness of about 150 Å in the hole H1, throughwhich the conductive polysilicon layer pattern 20 and the oxide layerpattern 30 are exposed, using a CVD process in which a Si₂H₆ gas is usedas the silicon source gas. The Si₂H₆ gas is a compound including twosilicon atoms.

When the Si₂H₆ gas is used, the silicon source does not tend to heavilydeposit around an interface between the conductive polysilicon layerpattern 20 and the oxide layer pattern 30, and a silicon seed isuniformly formed over the entire area in the hole H1. Accordingly, whenthe silicon layer 60 is formed in the hole H1 using the Si₂H₆ gas, anabnormally large seed is prevented from being formed around theinterface between the conductive polysilicon layer pattern 20 and theoxide layer pattern 30, and excellent surface roughness is achieved.This avoids an undesirable structure that includes a seam or void in thehole H1.

Methods of forming a contact plug without a seam or void, according toembodiments of the inventive concept, will now be explained. The methodsgenerally prevent an overhang from being formed due to an abnormallylarge seed in a contact hole when the contact hole is filled with asilicon layer in a state where the silicon layer is exposed through thecontact hole.

FIGS. 3A through 3F are cross-sectional views illustrating a method ofmanufacturing a semiconductor device, according to an embodiment of theinventive concept.

Referring to FIG. 3A, a silicon layer 120 is formed on a substrate 110,which includes a conductive area 112. A mask pattern 130 is formed onthe silicon layer 120.

The substrate 110 may be a semiconductor substrate, such as a siliconsubstrate, for example. The conductive area 112 may be an impurity areaformed in the substrate 110, for example. Alternatively, the conductivearea 112 may be a contact pad or a conductive line for electricallyconnecting conductive layers of different levels.

The silicon layer 120 may be a conductive or non-conductive polysiliconlayer, for example. The mask pattern 130 may be formed of a materialhaving an etch selectivity different from that of the silicon layer 120.For example, the mask pattern 130 may be formed of a hard mask materialincluding oxide, nitride, or a combination thereof. Alternatively, themask pattern 130 may be a photoresist pattern.

Referring to FIG. 3B, the silicon layer 120 is etched using the maskpattern 130 as an etch mask to form a contact hole 112, through whichthe conductive area 112 is exposed. Side walls of the silicon layer 120and the mask pattern 130 are thus exposed through the contact hole H2.

Referring to FIG. 3C, a purging process is performed using a purginggas, such as a N₂ gas, on a resultant structure with the contact holeH2. Then, a first conductive silicon layer 150 is formed in the contacthole H2 using a CVD process that uses a first silicon source 152 formedof a compound having at least two silicon atoms.

The first conductive silicon layer 150 covers a top surface of theconductive area 112 exposed through the contact hole H2, the side wallof the silicon layer 120 exposed through the contact hole 112, and theside wall and a top surface of the mask pattern 130. The firstconductive silicon layer 150 is fanned to partially fill the contacthole H2.

In order to form the first conductive silicon layer 150, the CVD processmay be performed by simultaneously supplying a first dopant source 154and the first silicon source 152 formed of the compound including the atleast two silicon atoms to the substrate 110 with the contact hole 112in a reaction chamber, e.g., a CVD reaction chamber. During the CVDprocess, the reaction chamber may be maintained at a relatively lowtemperature of about 350° C. to about 550° C. and a pressure atmosphereof about 50 Pa to about 200 Pa, for example.

In various embodiments, a compound represented by Si_(n)H_(2n+2) (wheren is a natural number satisfying 2=n=10) may be used as the firstsilicon source 152. For example, Si₂H₆ gas, Si₃H₆ gas, or Si₄H₈ gas,each of which includes two or more silicon atoms, may be used as thefirst silicon source 152. The first dopant source 154 may be an N-typeimpurity source, such as PH₃ or AsH₃, or a P-type impurity source, suchas BF₃ or BCl₃, for example.

Because the first conductive silicon layer 150 is formed using the firstsilicon source 152, which is a compound including the at least twosilicon atoms, an abnormally large seed is not formed around aninterface between the silicon layer 120 and the mask pattern 130, theside walls of which are exposed through the contact hole 112. Also, thefirst conductive silicon layer 150 formed in the contact hole H2 hasexcellent surface roughness.

Referring to FIG. 3D, a second conductive silicon layer 160 is formed onthe first conductive silicon layer 150 until the contact hole H2 iscompletely filled, using a second silicon source 162. The second siliconsource 162 is formed of a compound having a number of silicon atoms thatis less than the number of silicon atoms in the compound forming thefirst silicon source 152 of FIG. 3C. For example, the second siliconsource 162 may be SiH₄. in the present example. The second conductivesilicon layer 160 may be formed in situ in the reaction chamber used toform the first conductive silicon layer 150, described above withreference to FIG. 3C.

In order to form the second conductive silicon layer 160, a CVD processmay be performed by simultaneously supplying a second dopant source 164and the second silicon source 162 to the first conductive silicon layer150. For example, the CVD process may be performed in the reactionchamber in which the forming of the first conductive silicon layer 150was performed.

During the CVD process, the reaction chamber may be maintained at atemperature of about 450° C. to about 580° C., for example. The processtemperature at which the second conductive silicon layer 160 is formedmay be higher than the process temperature at which the first conductivesilicon layer 150 is formed. For example, when the first conductivesilicon layer 150 is formed, a process temperature of less than about500° C. may be maintained, and when the second conductive silicon layer160 is formed, a process temperature of higher than about 500° C. may bemaintained. In order to form the second conductive silicon layer 160,the reaction chamber may be maintained at a pressure of about 50 Pa toabout 200 Pa, for example.

The second dopant source 164 may be an N-type impurity source, such asPH₃ or AsH₃, or a P-type impurity source, such as BF₃ or BCl₃, forexample. The second dopant source 164 may be formed of the same materialas that of the first dopant source 162.

As stated above, in order to completely fill the contact hole H2 inwhich the first conductive silicon layer 150 is partially formed, thesecond conductive silicon layer 160 is formed using the second siliconsource 162, which is formed of a compound that includes fewer siliconatoms than the compound forming the first silicon source 152.Accordingly, the second conductive silicon layer 160 has excellent stepcoverage characteristics.

Referring to FIG. 3E, a purging process is performed by using a purginggas, such as an N₂ gas, on a resultant structure with the secondconductive silicon layer 160.

The first conductive silicon layer 150 and the second conductive siliconlayer 160 may be in amorphous states. In this case, the first conductivesilicon layer 150 and the second conductive silicon layer 160 may bephase-changed into polycrystalline states by performing heat treatmenton the resultant structure including the first conductive silicon layer150 and the second conductive silicon layer 160.

Referring to FIG. 3F, a contact plug 170 is formed by partially removingthe first conductive silicon layer 150 and the second conductive siliconlayer 160 to expose the mask pattern 130, and then removing the maskpattern 130. The contact plug 170 therefore includes the remainingportions of the first conductive silicon layer 150, which partiallyfills the contact hole H2, and the second conductive silicon layer 160,which is formed on the first conductive silicon layer 150 and adapted tofill the remaining space of the contact hole H2 around an entrance ofthe contact hole 170, spaced apart from the silicon layer 120.

Partially removing the first conductive silicon layer 150 and the secondconductive silicon layer 160 may be performed using an etch-backprocess, and removing the mask pattern 130 may be performed using awet-etching process, for example. Alternatively, partially removing thefirst conductive silicon layer 150 and the second conductive siliconlayer 160, and removing the mask pattern 130 may be performed using achemical mechanical polishing (CMP) process, for example.

Because the first conductive silicon layer 150, which includes the firstsilicon source 152 formed of a compound including at least two siliconatoms, and the second conductive silicon layer 160, which includes thesecond silicon source 162 formed of a compound including fewer siliconatoms than the compound of the first silicon source 152, aresequentially formed to form the contact plug 170, the contact hole H2 isfilled with a conductive material without a seam or void that wouldotherwise increase contact resistance.

FIG. 4 A is a layout of a semiconductor device 200 according to anembodiment of the inventive concept. FIG. 4B is a cross-sectional viewtaken along line 4B-4B′ of FIG. 4A, and FIG. 4C is a cross-sectionalview taken along line 4C-4C′ of FIG. 4A.

The semiconductor device 200 illustrated in FIGS. 4A through 4C may beapplied to a cell array, such as dynamic random access memory (DRAM)cell array. For example, the semiconductor device 200 may be applied toa DRAM cell array in which each DRAM cell has a unit cell size of 6F²,where F is a minimum feature size. However, the inventive concept is notlimited thereto.

Referring to FIGS. 4A through 4C, the semiconductor device 200 includesan isolation layer 216 formed on a substrate 210 and adapted to definemultiple active areas 214. The substrate 210 may be formed of asemiconductor material, such as silicon (Si).

Multiple buried word lines 230 having top surfaces that are lower thantop surfaces 214T of the active areas 214 extend in a first direction(y-direction in FIG. 4A), which is parallel to the direction in which amain surface of the substrate 210 extends. The top surfaces of theburied word lines 230 are covered by a capping layer 236. The cappinglayer 236 may include, for example, a silicon nitride layer. A gateinsulating layer 224 is formed between the buried word lines 230 and theactive areas 214.

An impurity area 218 acting as a source/drain region is formed in eachof the active areas 214. The impurity area 218 extends to apredetermined depth in the substrate 210 from each of the top surfaces214T of the active areas 214.

Multiple bit lines 250 are formed over the buried word lines 230 andextend in a second direction (x-direction in FIG. 4A) perpendicular tothe first direction. The bit lines 250 have a structure in which a firstbit line conductive pattern 250A and a second bit line conductivepattern 250B formed of different materials are sequentially stacked.However, the various embodiments are not limited to this configuration.

The semiconductor device 200 is configured in such a manner that twoburied word lines of the multiple buried word lines 230 extend inparallel in the y-direction for one active area of the multiple activeareas 214. A direct contact 260 is formed between the two buried wordlines for each active area 214. The direct contact 260 is formed in acontact hole 250H passing through the first bit line conductive pattern250A of the bit line 250. The direct contact 260 is electricallyconnected to the impurity area 218 formed in each of the active areas214. The bit line 250 is electrically connected to the impurity area 218formed in each of the active areas 214 through the direct contact 260.

The direct contact 260 has a structure in which a first contactconductive layer 262 and a second contact conductive layer 264 aresequentially stacked. The first contact conductive layer 262 is formedin the contact hole 250H formed in the first bit line conductive pattern250A and directly contacts the first bit line conductive pattern 250Aand the impurity area 218 of each of the active areas 214. The secondcontact conductive layer 264 is formed on the first contact conductivelayer 262, and fills a remaining space of the contact hole 250H.

The first contact conductive layer 262 of the direct contact 260 may beobtained from a first silicon source formed of a compound including atleast two silicon atoms. The first silicon source is the same as thefirst silicon source 152, discussed above with reference to FIG. 3C, forexample. The second contact conductive layer 264 of the direct contact260 may be obtained from a second silicon source formed of a compoundincluding fewer silicon atoms than the compound constituting the firstsilicon source. The second silicon source the same as the second siliconsource 162, discussed above with reference to FIG. 3D, for example.

Two buried contacts 280 are respectively formed on both sides of the twoburied word lines 230 for each of the active areas 214. Each of theburied contacts 280 is electrically connected to the impurity area 218formed in each of the active areas 214. The buried contact 280 mayelectrically connect a lower electrode (not shown) of a capacitor andthe impurity area 218. In particular, as shown in FIG. 4C, the buriedcontact 280 may be a direct buried contact that is directly connected tothe impurity area 218 formed in each of the active areas 214.

The buried contact 280 has a structure in which a third contactconductive layer 282 and a fourth contact conductive layer 284 aresequentially stacked. The third contact conductive layer 282 is formedin a contact hole 270H formed in an interlayer insulating layer 270 thatis formed on the substrate 210, and directly contacts the impurity area218 formed in each of the active areas 214. An insulating spacer 272 isdisposed between the interlayer insulating layer 270 and the thirdcontact conductive layer 282. The fourth contact conductive layer 284 isformed on the third contact conductive layer 282, and fills a remainingspace of the contact hole 270H.

The third contact conductive layer 282 of the buried contact 280 may beobtained from a first silicon source formed of a compound including atleast two silicon atoms. The first silicon source is the same as thefirst silicon source 152, discussed above with reference to FIG. 3C, forexample. The fourth contact conductive layer 284 may be obtained from asecond silicon source formed of a compound including fewer silicon atomsthan the compound constituting the first silicon source. The secondsilicon source is the same as the second silicon source 162, discussedabove with reference to FIG. 3D, for example.

FIGS. 5A through 5G are cross-sectional views illustrating a method ofmanufacturing a semiconductor device, according to another embodiment ofthe inventive concept.

The method of FIG. 5A through 5G, including a method of forming thedirect contact 260 illustrated in FIGS. 4A through 4C, will now beexplained. FIGS. 5A through 5G are cross-sectional views correspondingto the cross-sectional view taken along line 4B-4B′ of FIG. 4. In FIGS.5A through 5G, the same elements as those in FIGS. 3A through 3F and 4Athrough 4C are denoted by the same reference numerals and detailedexplanations thereof will not be repeated for clarity.

Referring to FIG. 5A, multiple trenches 220 are formed in the substrate210 on which the active areas 214 are defined by the isolation area 216.The gate insulating layer 224 and each of the buried word lines 230 aresequentially formed in each of the trenches 220. Next, the capping layer236 is formed on each of the buried word lines 230 to fill the remainingspace in each of the trenches 220.

The gate insulating layer 224 may be a silicon oxide layer, and theburied word lines 230 may be formed of a metal, metal nitride, orpolysilicon, such as titanium nitride (TiN), for example. The cappinglayer 236 may be formed of silicon nitride, for example.

The impurity area 218 is formed in each of the active areas 214 byinjecting impurities into both sides of each of the buried word lines230. The impurity area 218 may serve as a source/drain region. If theburied word lines 230 constitute an NMOS, an N-type impurity source,such as PH₃ or AsH₃, may be used during an ion implantation process forforming the impurity area 218. If the buried word lines 220 constitute aPMOS, a P-type impurity source, such as BF₃ or BCl₃, may be used duringan ion implantation process for forming the impurity area 218.

Next, an insulating layer 238 is formed on a top surface of thesubstrate 210 through which the isolation layer 216, the capping layer236, and the impurity area 218 are exposed. A lower conductive layer250L for forming the bit line 250 is formed on the insulating layer 238.The lower conductive layer 250L may constitute the first bit lineconductive pattern 250A illustrated in FIGS. 4B and 4C. The lowerconductive layer 250L may be a conductive polysilicon layer, forexample.

The insulating layer 238 may be a silicon oxide layer, for example. Invarious embodiments, the insulating layer 238 may be used as a gateinsulating layer of a transistor (not shown) formed on an area otherthan the semiconductor device 200 (see FIG. 4A), for example, a coreregion (not shown) or a peripheral circuit region (not shown).

Referring to FIG. 5B, a mask pattern 252 is formed on the lowerconductive layer 250L. Next, a contact hole H3 is formed by etching thelower conductive layer 250L and the insulating layer 238 using the maskpattern 252 as an etch mask. The contact hole H3 exposes the impurityarea 218, as well as side walls of the lower conductive layer 250L andthe mask pattern 252.

The mask pattern 252 may be formed of a material having an etchselectivity different from that of the lower conductive layer 250L. Forexample, the mask pattern 252 may be formed of a hard mask materialincluding oxide, nitride, or a combination thereof. Alternatively, themask pattern 252 may be a photoresist pattern.

FIG. 6 is a plan view illustrating the lower conductive layer 250L inwhich the contact hole H3 is formed by the operation of FIG. 5B.

Referring to FIG. 5C, a purging process is performed by using a purginggas, such as a N₂ gas, on a resultant structure with the contact holeH3. The first contact conductive layer 262 is then formed in the contacthole H3.

In order to form the first contact conductive layer 262, a CVD processmay be used in the same manner as described above with reference to FIG.3C for forming the first conductive silicon layer 150, e.g., using thefirst silicon source 152 formed of a compound including at least twosilicon atoms. The process of forming the first contact conductive layer262 may be the same as the process for forming the first conductivesilicon layer 150, described above with reference to FIG. 3C, andtherefore the detailed description will not be repeated.

The first contact conductive layer 262 is formed to cover a top surfaceof the impurity area 218 which is exposed through the contact hole H3,the side wall of the lower conductive layer 250L which is exposedthrough the contact hole H3, and the side wall and a top surface of themask pattern 252. The first contact conductive layer 262 is formed topartially fill the contact hole H3.

Because the first silicon source 152 formed of the compound includingthe at least two silicon atoms is supplied in order to form the firstcontact conductive layer 262, an abnormally large seed is not formedaround an interface between the mask pattern 252 and the lowerconductive layer 250L, the side walls of which are exposed through thecontact hole H3. Also, the first contact conductive layer 262 formed inthe contact hole H3 has excellent surface roughness.

Referring to FIG. 5D, a purging process is performed by using a purginggas, such as a N₂ gas, on a resultant structure with the first contactconductive layer 262. The second contact conductive layer 264 is thenformed on the first contact conductive layer 262 until the contact holeH3 is completely filled. The second contact conductive layer 264 fillsan inner space of the contact hole H3 around an entrance to be spacedapart from the lower conductive layer 250L in which the contact hole H3is formed.

In order to form the second contact conductive layer 264. The secondsilicon source 162 is formed of a compound including a number of siliconatoms which is less than the number of the silicon atoms of the compoundconstituting the first silicon source 152. In order to form the secondcontact conductive layer 264, the second silicon source 162 may be usedin the same manner as described above with reference to FIG. 3C to formthe second conductive silicon layer 160. The process of forming thesecond contact conductive layer 264 may be the same as the process forforming the second conductive silicon layer 160, described above withreference to FIG. 3D, and therefore the detailed description will not berepeated. The second contact conductive layer 264 may be formed in situin the reaction chamber that was used to form the first contactconductive layer 262, described with reference to FIG. 5C.

Because the second contact conductive layer 264 for filling theremaining space of the contact hole H3 formed in the first contactconductive layer 262 is formed of a compound including fewer siliconatoms than the compound constituting the first silicon source 152, thesecond contact conductive layer 264 has excellent step coveragecharacteristics.

Referring to FIG. 5E, a purging process is performed by using a purginggas, such as a N₂ gas, on a resultant structure with the second contactconductive layer 264.

The first contact conductive layer 262 and the second contact conductivelayer 264 may be in amorphous states. In this case, the first contactconductive layer 262 and the second contact conductive layer 264 may bephase-changed into polycrystalline states by performing heat treatmenton the resultant structure including the first contact conductive layer262 and the second contact conductive layer 264.

Referring to FIG. 5F, the direct contact 260 is formed by partiallyremoving the first contact conductive layer 262 and the second contactconductive layer 264 to expose the mask pattern 252, and removing themask pattern 252. The direct contact 260 thus includes the first contactconductive layer 262 and the second contact conductive layer 264 formedin the contact hole H3.

Partially removing of the first contact conductive layer 262 and thesecond contact conductive layer 264 may be performed using an etch-backprocess, and removing of the mask pattern 252 may be performed using awet-etching process, for example. Alternatively, partially removing ofthe first contact conductive layer 262 and the second contact conductivelayer 264, and removing of the mask pattern 252, may be performed by aCMP process, for example.

Because the first contact conductive layer 262, which includes the firstsilicon source 152 formed of the compound having at least two siliconatoms, and the second contact conductive layer 264, which includes thesecond silicon source 162 formed of a compound having fewer siliconatoms than the compound of the first silicon source 152, aresequentially formed in order to form the direct contact 260, the contacthole H3 is filled with a conductive material without a seam or void thatwould otherwise increase contact resistance.

FIG. 7 is a plan view of the lower conductive layer 250L and the directcontact 260 formed in the contact hole H3 by the operation of FIG. 5F.

Referring to FIG. 5G, an upper conductive layer 250U is formed on thedirect contact 260 and the lower conductive layer 250L to form the bitline 250. The upper conductive layer 250U may constitute the second bitline conductive pattern 250B illustrated in FIGS. 4B and 4C. The upperconductive layer 250U may be formed of a metal, such as tungsten, forexample.

Next, a mask pattern 268 is formed on the upper conductive layer 250U.The upper conductive layer 250U and the lower conductive layer 250L areetched using the mask pattern 268 as an etch mask to form the bit line250, which includes remaining portions of the lower conductive layer250L and the upper conductive layer 250U. The bit line 250 may have alayout as illustrated in FIG. 4A, for example. The mask pattern 268 maybe a hard mask pattern, for example, including a silicon nitride layer,a silicon oxide layer, or a combination thereof.

FIGS. 8A through 8G are cross-sectional views illustrating a method ofmanufacturing a semiconductor device, according to another embodiment ofthe inventive concept.

The method of FIGS. 8A through 8G including a process of forming theburied contact 280 illustrated in FIGS. 4A through 4C will now beexplained. FIGS. 8A through 8G are cross-sectional views correspondingto the cross-sectional view taken along line 4C-4C′ of FIG. 4. In FIGS.8A through 8G, elements the same as those shown in FIGS. 3A through 3F,FIGS. 4A through 4C, and FIGS. 5A through 5G are denoted by the samereference numerals, respectively, and detailed explanations thereof willnot be repeated.

Referring to FIG. 8A, a series of operations as described with referenceto FIGS. 5A through 5G are performed. Then, a space between adjacent bitlines, each covered by the mask pattern 268, is filled with theinterlayer insulating layer 270.

Although a top surface of the interlayer insulating layer 270 is almostat the same level as a top surface of the mask pattern 268 in FIG. 8A,the present embodiment is not limited thereto. For example, the topsurface of the interlayer insulating layer 270 may be higher than thetop surface of the mask pattern 268 in terms of level.

Referring to FIG. 8B, an etch mask pattern (not shown) is formed on theinterlayer insulating layer 270, and then the interlayer insulatinglayer 270 is etched using the etch mask pattern to form multiple contactholes H4 through which multiple impurity areas 218 formed in the activeareas 214 are exposed.

Referring to FIG. 8C, the insulating spacer 272 is formed in eachcontact hole H4 along a side wall of the interlayer insulating layer270. The insulating spacer 272 prevents a short circuit between the bitline 250 and conductive material of the buried contact 280, formed incontact holes H3 in a subsequent process. The insulating spacer 272 maybe formed of silicon oxide, for example. In order to form the insulatingspacer 272, a silicon oxide layer is formed in the contact holes H4 andon a top surface of the interlayer insulating layer 270 in which thecontact holes H4 are formed, and the silicon oxide layer is etched backto remain on side walls of the contact holes H4. The impurity area 218is exposed through each of the contact holes H4 in which the insulatingspacer 272 is formed.

Referring to FIG. 8D, a purging process is performed by using a purginggas, such as a N₂ gas, on a resultant structure with the contact holesH4. The third contact conductive layer 282 is then formed in the contactholes H4. In order to form the third contact conductive layer 282, a CVDprocess using the first silicon source 152 formed of a compoundincluding at least two silicon atoms may be used in the same manner asused to form the first conductive silicon layer 150. Thus, the processfor forming the third contact conductive layer 282 may be the same asthe process for fanning the first conductive silicon layer 150,discussed above with reference to FIG. 3C.

The third contact conductive layer 282 is formed to cover a top surfaceof the impurity areas 218 exposed through each of the contact holes H4,a side wall of the insulating spacer 272 exposed through the contacthole 114, and a top surface of the interlayer insulating layer 270. Thethird contact conductive layer 282 is formed to partially fill thecontact hole H4.

Because the first silicon source 152 formed of the compound includingthe at least two silicon atoms is supplied to form the third contactconductive layer 282, the third contact conductive layer 282 formed inthe contact holes H4 has excellent surface roughness.

Referring to FIG. 8E, a purging process is performed by using a purginggas, such as a N₂ gas, on a resultant structure with the third contactconductive layer 282. The fourth contact conductive layer 284 is formedon the third contact conductive layer 282 until the contact hole H4 iscompletely filled.

In order to form the fourth contact conductive layer 284, the secondsilicon source 162, formed of a compound having fewer silicon atoms thanthe compound constituting the first silicon source 152, may be used inthe same manner as used to form the second conductive silicon layer 160.Thus, the process for forming the fourth contact conductive layer 284may be the same as the process for forming the second conductive siliconlayer 160, discussed above with reference to FIG. 3D. The fourth contactconductive layer 284 may be formed in situ in the reaction chamber thatwas used to form the third contact conductive layer 282, described abovewith reference to FIG. 8D.

Because the fourth contact conductive layer 284 for filling a remainingspace of the contact holes H4 in the third contact conductive layer 282is formed using the second silicon source 162, which is the compoundincluding fewer silicon atoms than the compound constituting the firstsilicon source 152, the fourth contact conductive layer 284 hasexcellent step coverage characteristics.

Referring to FIG. 8F, a purging process is performed by using purginggas, such as a N₂ gas, on a resultant structure with the fourth contactconductive layer 284. The third contact conductive layer 282 and thefourth contact conductive layer 284 may be in amorphous states. In thiscase, the third contact conductive layer 282 and the fourth contactconductive layer 284 may be phase-changed into polycrystalline states byperforming heat treatment on the resultant structure, including thethird contact conductive layer 282 and the fourth contact conductivelayer 284.

Referring to FIG. 8G, the third contact conductive layer 282 and thefourth contact conductive layer 284 are partially removed from thesubstrate 210 to expose the interlayer insulating layer 270. As aresult, the buried contact 280 including remaining portions of the thirdcontact conductive layer 282 and the fourth contact conductive layer 284which fill the contact holes H4 is formed. The partially removing of thethird contact conductive layer 282 and the fourth contact conductivelayer 284 may be performed by an etch-back process or a CMP process, forexample.

Because the second contact conductive layer 282, obtained using thefirst silicon source 152 formed of the compound including the at leasttwo silicon atoms, and the fourth contact conductive layer 284, obtainedusing the second silicon source formed of the compound including fewersilicon atoms than the compound constituting the first silicon source152, are sequentially formed in order to form the buried contact 280,the contact holes H4 are filled with conductive materials without seamsor voids that would increase contact resistance.

FIG. 9 is a plan view of a memory module 300 including a semiconductordevice, according to an embodiment of the inventive concept.

The memory module 300 includes a printed circuit board 310 and multiplesemiconductor packages 320. The semiconductor packages 320 includessemiconductor devices manufactured according to the methods describedabove, for example. That is, the semiconductor packages 320 may includesemiconductor devices manufactured by the methods described withreference to FIGS. 3A through 3F, FIGS. 4A through 4C, FIGS. 5A through5G, FIG. 6, FIG. 7, and FIGS. 8A through 8G.

The memory module 300 may be a single in-line memory module (SIMM), inwhich the semiconductor packages 320 are arranged on only one surface ofthe printed circuit board 310, or a dual in-line memory module (DIMM),in which the semiconductor packages 320 are arranged on both surfaces ofthe printed circuit board 310. The memory module 300 may be a fullybuffered DIMM (FBDIMM) having an advanced memory buffer (AMB) forrespectively providing external signals to the semiconductor packages320.

FIG. 10 is a block diagram of a memory card 400 including asemiconductor device, according to an embodiment of the inventiveconcept.

The memory card 400 may be configured such that a controller 410 and amemory 420 exchange an electrical signal. For example, when thecontroller 410 outputs a command to the memory 420, the memory 420 maytransmit data.

The memory 420 may include semiconductor devices manufactured accordingto the methods described above, for example. That is, the memory 420 mayinclude semiconductor devices manufactured by the methods described withreference to FIGS. 3A through 3F, FIGS. 4A through 4C, FIGS. 5A through5G, FIG. 6, FIG. 7, and FIGS. 8A through 8G.

The memory card 400 may be any of various types of memory cards, such asa memory stick card, a smart media (SM) card, a secure digital (SD)card, a mini-SD card, and a multimedia card (MMC).

FIG. 11 is a system 500 including a semiconductor device, according toan embodiment of the inventive concept.

The system 500 includes a processor 510, an input/output device 530, anda memory 520. The processor 510, the input/output device 530, and thememory 520 may communicate data with one another via a bus 550. Thememory 520 of the system 500 may be a random access memory (RAM) or aread-only memory (ROM). The system 500 may further include a peripheraldevice 540, such as a floppy disk drive or a compact disk (CD) ROMdrive.

The memory 520 may include semiconductor devices manufactured accordingto the methods described above, for example. That is, the memory 520 mayinclude semiconductor devices manufactured by the methods described withreference to FIGS. 3A through 3F, FIGS. 4A through 4C, FIGS. 5A through5G, FIG. 6, FIG. 7, and FIGS. 8A through 8G. The memory 520 may storecode and data in order to operate the processor 510.

The system 500 may be used in various types of electronic devices, suchas a mobile phone, an MP3 player, a navigation system, a portablemultimedia player (PMP), a solid-state disk (SSD), or a householdappliance.

As described above, a contact hole in a semiconductor device is filledwith a conductive material to form a contact plug, which is small enoughto scale down a semiconductor device, without forming a seam or voidthat would increase contact resistance. Thus, the electriccharacteristics of the contact plug, as well as the reliability of thesemiconductor device, are improved.

While the inventive concept has been described with reference toexemplary embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the present invention. Therefore, it shouldbe understood that the above embodiments are not limiting, butillustrative.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: forming a first pattern having a contact holethrough which a top surface of a conductive area of a semiconductorsubstrate is exposed, wherein the first pattern comprises a conductivelayer of polysilicon and a mask pattern of electrically insulativematerial directly on the conductive layer of polysilicon; forming aconformal first silicon layer on the exposed top surface of theconductive area and directly on a side wall surface of the first patternincluding across an interface between the conductive layer and the maskpattern, wherein the first silicon layer is formed in contact with aside wall surface of the conductive pattern and with a sidewall surfaceof the mask pattern to fill part of the contact hole, the first siliconlayer being formed using a first compound whose chemical formulacontains at least two silicon atoms; forming a second silicon layer onthe first silicon layer to fill the remainder of the contact hole, thesecond silicon layer being formed using a second compound whose chemicalformula contains fewer silicon atoms than that of the first compound;removing portions of the first silicon layer and the second siliconlayer and removing the mask pattern to form a contact plug comprisingportions of the first silicon layer and the second silicon layerremaining in the contact hole.
 2. The method of claim 1, wherein thechemical formula of the first compound is represented by Si_(n)H_(2n+2),wherein n is a natural number satisfying 2≦n≦10.
 3. The method of claim1, wherein the first compound is Si₂H₆, and the second compound is SiH₄.4. The method of claim 1, wherein each of the first silicon layer andthe second silicon layer is formed by chemical vapor deposition (CVD).5. The method of claim 1, wherein forming the first silicon layercomprises forming the first silicon layer at a first temperatureselected from temperatures in a range of about 350° C. to about 550° C.,and wherein forming the second silicon layer comprises forming thesecond silicon layer at a second temperature higher than the firsttemperature.
 6. The method of claim 1, wherein the first silicon layeris formed in contact with the conductive area.
 7. The method of claim 1,further comprising: forming a conductive layer covering the contact plugand the first pattern.
 8. The method of claim 1, wherein the maskpattern comprises an oxide layer directly on the conductive pattern ofpolysilicon such that the first silicon layer crosses an interfacebetween the conductive pattern and the oxide layer.
 9. The method ofclaim 4, wherein forming the second silicon layer comprises forming thesecond silicon layer in situ in a reaction chamber used to form thefirst silicon layer.
 10. The method of claim 4, wherein forming thefirst silicon layer comprises simultaneously supplying the firstcompound and a first dopant source, and wherein forming the secondsilicon layer comprises simultaneously supplying the second compound anda second dopant source.
 11. A method of manufacturing a semiconductordevice, the method comprising: forming a conductive polysilicon layer ona semiconductor substrate having a conductive area; forming a maskpattern directly on the conductive polysilicon layer; etching theconductive polysilicon layer using the mask pattern as an etch mask toform a contact hole through which the conductive area is exposed;forming a conformal first contact conductive layer directly on the maskpattern and the conductive polysilicon layer, and on the conductive areaexposed through the contact hole using a chemical vapor deposition (CVD)process using a first dopant source and a first silicon source formed ofa compound whose chemical formula contains at least two silicon atoms,wherein the first contact conductive layer fills part of the contacthole and extends across an interface between the conductive polysiliconlayer and the mask pattern within the contact hole; forming a secondcontact conductive layer on the first contact conductive layer, fillingthe remainder of the contact hole including space around an entrance ofthe contact hole, using a CVD process using a second dopant source and asecond silicon source formed of a compound whose chemical formulacontains fewer silicon atoms than that of the compound of the firstsilicon source; and removing portions of the first contact conductivelayer and the second contact conductive layer and removing the maskpattern to form a contact plug comprising portions of the first contactconductive layer and the second contact conductive layer remaining inthe contact hole.
 12. The method of claim 11, wherein the first siliconsource is represented by Si_(n)H_(2n+2), wherein n is a natural numbersatisfying 2≦n≦10; and the second silicon source is represented bySi_(n)H_(2n+2), wherein n is a natural number satisfying 1≦n ≦10. 13.The method of claim 11, wherein the chemical formula of the firstsilicon source is Si₂H₆, and the chemical formula of the second siliconsource is SiH₄.
 14. The method of claim 11, wherein the first contactconductive layer is formed in the contact hole in contact with theconductive area and the conductive polysilicon layer.
 15. The method ofclaim 11, further comprising: forming a conductive layer covering thecontact plug and the first contact conductive layer.
 16. The method ofclaim 11, wherein forming the mask pattern comprises forming an oxidelayer directly on the conductive pattern of polysilicon, and the firstsilicon layer crosses an interface between the conductive pattern andthe oxide layer.